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| Excelics * * * * * 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 20% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1616-8P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=16.2-16.4GHz MIN 38 5 TYP 39 6 20 3520 f=16.2-16.4GHz 4400 5760 6000 -1.0 -13 -15 2.3 o MAX UNIT dBm dB % mA dBm P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=48mA 6800 mA mS -2.5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 720mA 38dBm 175oC -65/175oC 60W 8V -3V 6240mA 120mA @ 3dB Compression 150oC -65/150oC 50W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com |
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